collector-emitter voltage vce 600 v dc collector current tc=70c, tvj=175c tc=25c,tvj=175c i c , nom ic 400 500 a repetitive peak collector cur- rent tp=1msec,tc=80c i crm 800 a total powerdissipation tc=25c p tot 850 w gate-emitter peak voltage v ges +/-20 v dc forward diode current i f 400 a repetitive peak forward current tp=1msec i frm 800 a i 2 t value per diode vr=0v, tp=10msec, tvj=125c tvj=150c i 2 t 11000 10500 a 2 sec isolation test voltage rms, 50hz, t=1min v isol 2500 v attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -aln isolation maximum rated values/ electrical properties SML400HB06 collector-emitter saturation voltage ic=400a,vge=15v, tc=25c ic=400a,vge=15v,tc=125c ic=400a,vge=15v,tc=150c v ce(sat) 1.55 1.6 1.7 1.9 v gate threshold voltage ic=6.4ma,vce=vge, tvj=25c vge (th) 4.9 5.8 6.5 v input capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c ies 26 nf reverse transfer capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c res 0.76 nf collector emitter cut off current vce=600v,vge=0v,tvj=25c vce=600v,vge=0v,tvj=125c i ces 1 1 5 ma ma gate emitter cut off current vce=0v,vge=20v,tvj=25c i ges 400 na
turn on delay time ic=400a, vcc=300v vge=+/15v,rg=1.5 ? ,tvj=25c vge=+/-15v,rg=1.5 ? ,tvj=125c vge=+/-15v,rg=1.5 ? ,tvj=150c t d,on 110 120 130 nsec nsec nsec rise time ic=400a, vcc=300v vge=+/-15v,rg=1.5 ? ,tvj=25c vge=+/-15v,rg=1.5 ? ,tvj=125c vge=+/-15v,rg=1.5 ? ,tvj=150c tr 50 60 60 nsec nsec nsec turn off delay time ic=400a, vcc=300v vge=+/-15v,rg=1.5 ? ,tvj=25c vge=+/-15v,rg=1.5 ? ,tvj=125c vge=+/-15v,rg=1.5 ? ,tvj=150c t d , off 490 520 530 nsec nsec nsec fall time ic=400a, vcc=300v vge=+/-15v,rg=1.5 ? ,tvj=25c vge=+/-15v,rg=1.5 ? ,tvj=125c vge=+/-15v,rg=1.5 ? ,tvj=150c t f 50 70 70 nsec nsec nsec turn energy loss per pulse ic=400a,vce=300v,vge=15v rge=1.5 ? ,l=30nh tvj=125c tvj=150c e on 3.2 3.4 mj mj turn off energy loss per pulse ic=400a,vce=300v,vge=15v rge=1.5 ? ,l=30nh tvj=125c tvj=150c e off 15 15.5 mj mj sc data tp 10sec, vge 15v vcc=360v, tvj=25c vce (max)= vces-l di/dt tvj=150c i sc 2800 2000 a a stray module inductance l ce 40 nh terminal-chip resistance r c 1.2 m ? forward voltage ic=400a,vge=0v, tc=25c ic=400a,vge=0v, tc=125c ic=400a,vge=0v, tc=150c v f 1.55 1.5 1.4 1.9 v v v peak reverse recovery current if=400a, -di/dt=7000a/sec vce=300v,vge=-10v,tvj=25c vce=300v,vge=-10v,tvj=125c vce=300v,vge=-10v,tvj=150c i rm 270 330 350 a a a recovered charge if=400a, -di/dt=7000a/sec vce=600v,vge=-10v,tvj=25c vce=600v,vge=-10v,tvj=125c vce=600v,vge=-10v,tvj=150c qr 15 29 32 c c c reverse recovery energy if=400a, -di/dt=7000a/sec vce=600v,vge=-10v,tvj=25c vce=600v,vge=-10v,tvj=125c vce=600v,vge=-10v,tvj=150c e rec 3.6 7.4 8.3 mj mj mj diode characteristics
thermal resistance junction to case igbt diode r j-c 0.09 0.1 k/w thermal resistance case to heatsink r c-hs 0.03 k/w maximum junction temperature tvj 175 c maximum operating temperature top -55 175 c storage temperature tstg -55 175 c thermal properties min typ max
circuit diagram
|
